Improved Thermoelectric Performance of NbCoSb with Intrinsic Nb Vacancies and Ni-Doping-Induced Band Degeneracy-Reference-Cited by-同舟云学术

Improved Thermoelectric Performance of NbCoSb with Intrinsic Nb Vacancies and Ni-Doping-Induced Band Degeneracy

Published:2023-01-05 Issue:2 Volume:6 Page:714-722
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Zhang Ju¹^ORCID,Wang Yuanxu¹,Zhong Shiqi¹,Ke San-Huang¹

Affiliation:

1. MOE Key Laboratory of Microstructured Materials, School of Physics Science and Engineering, Tongji University, 1239 Siping Road, Shanghai200092, People’s Republic of China

Funder

Natural Science Foundation of Shanghai

Natural Science Foundation of Henan Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.2c02849

Reference47 articles.

1. Ultrahigh carrier mobility contributes to remarkably enhanced thermoelectric performance in n-type PbSe

2. Ultralow lattice thermal conductivity enables high thermoelectric performance in BaAg2Te2 alloys

3. Enhanced thermoelectric performance in Sb–Br codoped Bi₂Se₃ with complex electronic structure and chemical bond softening

4. Thermoelectric p-Type Ag9GaTe6 with an Intrinsically Low Lattice Thermal Conductivity

5. A Theoretical Study on the Thermal Conductivity and Thermoelectric Properties of CoNbSi and CoNbSn

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