III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects-Reference-Cited by-同舟云学术

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III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects

Published:2007-07-04 Issue:8 Volume:7 Page:2486-2490
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dayeh Shadi A.¹,Yu Edward T.¹,Wang Deli¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of California−San Diego, La Jolla, California 92093

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0712668

Reference22 articles.

1. Semiconductor nanowhiskers

2. A New Understanding of Au-Assisted Growth of III-V Semiconductor Nanowires

3. Vertically aligned, catalyst-free InP nanowires grown by metalorganic chemical vapor deposition

4. Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

5. Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires

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2. Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition;Nanotechnology;2023-09-18

3. Visualizing the Mechanism Switching in High-Temperature Au-Catalyzed InAs Nanowire Growth;Crystal Growth & Design;2023-08-08

4. Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage;The Journal of Physical Chemistry Letters;2023-05-04

5. MOCVD Growth and Structural Properties of ZnS Nanowires: A Case Study of Polytypism;Nanomaterials;2022-07-06

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