Biaxial Strain in Graphene Adhered to Shallow Depressions-Reference-Cited by-同舟云学术

Biaxial Strain in Graphene Adhered to Shallow Depressions

Published:2009-11-23 Issue:1 Volume:10 Page:6-10
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Metzger Constanze¹,Rémi Sebastian¹,Liu Mengkun¹,Kusminskiy Silvia V.¹,Castro Neto Antonio H.¹,Swan Anna K.¹,Goldberg Bennett B.¹

Affiliation:

1. Department of Physics, 590 Commonwealth Avenue, and Department of Electrical and Computer Engineering and The Boston University Photonics Center, 8 Saint Mary’s Street, Boston University, Boston, Massachusetts 02215

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl901625v

Reference30 articles.

1. Raman Spectrum of Graphene and Graphene Layers

2. The electronic properties of graphene

3. Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene

4. Raman imaging of doping domains in graphene on SiO2

5. Breakdown of the adiabatic Born–Oppenheimer approximation in graphene

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