Electronic Properties of Si Surfaces and Side Reactions during Electrochemical Grafting of Phenyl Layers-Reference-Cited by-同舟云学术

Electronic Properties of Si Surfaces and Side Reactions during Electrochemical Grafting of Phenyl Layers

Published:2005-12-23 Issue:3 Volume:110 Page:1332-1337
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Rappich Joerg¹,Merson Alexandra¹,Roodenko Katy¹,Dittrich Thomas¹,Gensch Michael¹,Hinrichs Karsten¹,Shapira Yoram¹

Affiliation:

1. Hahn-Meitner-Institut, Abt. SE1, Kekuléstr. 5, D-12489 Berlin, Germany, Department of Physical-Electronics, Faculty of Engineering, Tel-Aviv University, Israel, ISASInstitute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany, and Hahn-Meitner-Institut, Abt. SE2, Glienicker Str. 100, D-14109 Berlin, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0545344

Reference31 articles.

1. Covalent attachment of oligodeoxyribonucleotides to amine-modified Si (001) surfaces

2. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

3. Engineering of Si surfaces by electrochemical grafting ofp-nitrobenzene molecules

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