Photocurrent Imaging of p−n Junctions in Ambipolar Carbon Nanotube Transistors-Reference-Cited by-同舟云学术

Photocurrent Imaging of p−n Junctions in Ambipolar Carbon Nanotube Transistors

Published:2007-10-16 Issue:11 Volume:7 Page:3320-3323
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ahn Y. H.¹,Tsen A. W.¹,Kim Bio¹,Park Yung Woo¹,Park Jiwoong¹

Affiliation:

1. Division of Energy Systems Research, Ajou University, Suwon 443-749, Korea, Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, Department of Physics and Astronomy, Seoul National University, Seoul 151-742, Korea, and The Rowland Institute at Harvard, Harvard University, Cambridge, Massachusetts 02142

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl071536m

Reference19 articles.

1. Electron Transport in Single-Walled Carbon Nanotubes

2. Carbon Nanotube Electronics and Optoelectronics

3. Nanoscale Science and Technology: Building a Big Future from Small Things

4. Carbon Nanotubes as Schottky Barrier Transistors

5. Field-Modulated Carrier Transport in Carbon Nanotube Transistors

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