High-Yield Transfer Printing of Metal–Insulator–Metal Nanodiodes-Reference-Cited by-同舟云学术

High-Yield Transfer Printing of Metal–Insulator–Metal Nanodiodes

Published:2012-03-08 Issue:3 Volume:6 Page:2853-2859
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bareiß Mario¹,Ante Frederik²,Kälblein Daniel²,Jegert Gunther¹,Jirauschek Christian¹,Scarpa Giuseppe¹,Fabel Bernhard¹,Nelson Edward M.³,Timp Gregory³,Zschieschang Ute²,Klauk Hagen²,Porod Wolfgang³,Lugli Paolo¹

Affiliation:

1. Institute for Nanoelectronics, Technische Universität München, Arcisstrasse 21, 80333 Munich, Germany

2. Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany

3. Center for Nano Science and Technology, University of Notre Dame, 275 Fitzpatrick, Indiana 46556, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn3004058

Reference37 articles.

1. Antennas for light

2. Engineering the current–voltage characteristics of metal–insulator–metal diodes using double-insulator tunnel barriers

3. Modulation transfer function for infrared reflectarrays

4. A metal/insulator/metal field-emission cannon

5. Nanoionics-based resistive switching memories

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