Inherent Control of Growth, Morphology, and Defect Formation in Germanium Nanowires-Reference-Cited by-同舟云学术

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Inherent Control of Growth, Morphology, and Defect Formation in Germanium Nanowires

Published:2012-10-18 Issue:11 Volume:12 Page:5654-5663
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Biswas Subhajit¹,Singha Achintya²,Morris Michael A.¹³,Holmes Justin D.¹³

Affiliation:

1. Materials Chemistry & Analysis Group, Department of Chemistry and the Tyndall National Institute, University College Cork, Cork, Ireland

2. Department of Physics, Bose Institute, Kolkata-700009, India

3. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl302800u

Reference52 articles.

1. Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation

2. Light Trapping in Silicon Nanowire Solar Cells

3. Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication

4. Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

5. Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires

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