Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device-Reference-Cited by-同舟云学术

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Published:2015-02-19 Issue:8 Volume:137 Page:3102-3108
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Liang Lin¹,Li Kun¹,Xiao Chong¹,Fan Shaojuan²,Liu Jiao¹,Zhang Wenshuai²,Xu Wenhui¹,Tong Wei³,Liao Jiaying¹,Zhou Yingying¹,Ye Bangjiao²,Xie Yi¹

Affiliation:

1. Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China

2. State Key Laboratory of Particle Detection and Electronics, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China

3. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, P.R. China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Jiangsu Key Laboratory for Environment Functional Materials

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.5b00021

Reference35 articles.

1. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

2. Memristive devices for computing

3. Phase-change materials for rewriteable data storage

4. Resistive switching in transition metal oxides

5. Nanoionics-based resistive switching memories

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