Controllable N-Doping of Graphene-Reference-Cited by-同舟云学术

Controllable N-Doping of Graphene

Published:2010-10-22 Issue:12 Volume:10 Page:4975-4980
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Guo Beidou¹²,Liu Qian¹,Chen Erdan¹,Zhu Hewei¹,Fang Liang²,Gong Jian Ru¹

Affiliation:

1. Laboratory for Nanodevices, National Center for Nanoscience and Technology, China, 11 Zhongguancun Beiyitiao, Beijing 100190, People’s Republic of China

2. Department of Applied Physics, Chongqing University, Chongqing 400044, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl103079j

Reference43 articles.

1. Superior Thermal Conductivity of Single-Layer Graphene

2. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

3. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

4. Intrinsic and extrinsic performance limits of graphene devices on SiO2

5. Conductance Enhancement in Nanographene−Gold Junctions by Molecular π-Stacking

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