Determination of Quantum Capacitance and Band Filling Potential in Graphene Transistors with Dual Electrochemical and Field-Effect Gates-Reference-Cited by-同舟云学术

Determination of Quantum Capacitance and Band Filling Potential in Graphene Transistors with Dual Electrochemical and Field-Effect Gates

Published:2014-08-28 Issue:36 Volume:118 Page:21160-21169
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kim Chang-Hyun¹,Frisbie C. Daniel¹

Affiliation:

1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp505391u

Reference84 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. The electronic properties of graphene

4. Colloquium: The transport properties of graphene: An introduction

5. Graphene: Electronic and Photonic Properties and Devices

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