Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn-Reference-Cited by-同舟云学术

Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn

Published:2010-01-04 Issue:2 Volume:10 Page:509-513
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ford Alexandra C.¹,Chuang Steven¹,Ho Johnny C.¹,Chueh Yu-Lun¹,Fan Zhiyong¹,Javey Ali¹

Affiliation:

1. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Berkeley Sensor and Actuator Center, University of California at Berkeley, Berkeley, California 94720

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl903322s

Reference21 articles.

1. In Search of “Forever,” Continued Transistor Scaling One New Material at a Time

2. Toward Nanowire Electronics

3. Nanowire Transistor Performance Limits and Applications

4. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

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