Remote Doping and Schottky Barrier Formation in Strongly Quantum Confined Single PbSe Nanowire Field-Effect Transistors-Reference-Cited by-同舟云学术

Remote Doping and Schottky Barrier Formation in Strongly Quantum Confined Single PbSe Nanowire Field-Effect Transistors

Published:2012-04-27 Issue:5 Volume:6 Page:4328-4334
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Oh Soong Ju¹,Kim David K.¹,Kagan Cherie. R.¹

Affiliation:

1. Department of Materials Science and Engineering, ‡Department of Electrical and Systems Engineering, §Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn3009382

Reference38 articles.

1. Alignment, Electronic Properties, Doping, and On-Chip Growth of Colloidal PbSe Nanowires

2. Field-Effect Modulation of Seebeck Coefficient in Single PbSe Nanowires

3. Thermoelectric properties of p-type PbSe nanowires

4. Hyperbranched PbS and PbSe Nanowires and the Effect of Hydrogen Gas on Their Synthesis

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