Photoelectrochemical Properties of InxGa1–xN/GaN Multiquantum Well Structures in Depletion Layers-Reference-Cited by-同舟云学术

Photoelectrochemical Properties of InxGa1–xN/GaN Multiquantum Well Structures in Depletion Layers

Author:

Fujii Katsushi¹²,Nakamura Shinichiro³,Yokojima Satoshi³⁴,Goto Takenari²,Yao Takafumi²,Sugiyama Masakazu⁵,Nakano Yoshiaki¹⁵

Affiliation:

1. Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan

2. Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai, 980-8578, Japan

3. Nakamura Laboratory, Research Cluster for Innovation, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan

4. School of Pharmacy, Tokyo University of Pharmacy and Life Sciences, 1432-1 Horinouchi, Hachioji, Tokyo, 192-0392, Japan

5. School of Engineering, Univeristy of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference10 articles.

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