Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage-Reference-Cited by-同舟云学术

Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage

Published:2014-02-05 Issue:3 Volume:14 Page:1164-1171
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wang Xi¹,Weng Qunhong¹,Liu Xizheng²,Wang Xuebin¹,Tang Dai-Ming¹,Tian Wei¹,Zhang Chao¹,Yi Wei¹,Liu Dequan¹,Bando Yoshio¹,Golberg Dmitri¹

Affiliation:

1. International Center for Young Scientists (ICYS), World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

2. Graduate School of System and Information Engineering, University of Tsukuba, Tennoudai 1-1-1, Tsukuba, 305-8573, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl4038592

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