Gas Phase Formation of Dense Alkanethiol Layers on GaAs(110)-Reference-Cited by-同舟云学术

Gas Phase Formation of Dense Alkanethiol Layers on GaAs(110)

Published:2007-06-01 Issue:25 Volume:129 Page:7807-7813
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Rodríguez Luis M.¹,Gayone J. Esteban¹,Sánchez Esteban A.¹,Grizzi Oscar¹,Blum Bárbara¹,Salvarezza Roberto C.¹,Xi Luan¹,Lau Woon Ming¹

Affiliation:

1. Contribution from the Centro Atómico Bariloche, CNEA, I. Balseiro, UNC & CONICET, Bustillo 9500, R8402AGP Bariloche, Argentina, INIFTA, Depto de Química, UNLP & CONICET, CC. 16-Suc.4, BI904DPI La Plata, Argentina, and Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7, Canada

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja069007s

Reference26 articles.

1. Molecular Self-Assembly at Bare Semiconductor Surfaces: Preparation and Characterization of Highly Organized Octadecanethiolate Monolayers on GaAs(001)

2. Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs

3. Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

4. “Dip-Pen” Nanolithography on Semiconductor Surfaces

5. Pattern transfer: Self-assembled monolayers as ultrathin resists

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