Growth of a High Quality Quartz Film on Sapphire by Catalyst-Enhanced Atmospheric-Pressure Vapor-Phase Epitaxy Using Buffer Layers-Reference-Cited by-同舟云学术

Growth of a High Quality Quartz Film on Sapphire by Catalyst-Enhanced Atmospheric-Pressure Vapor-Phase Epitaxy Using Buffer Layers

Published:2003-06-07 Issue:15 Volume:15 Page:2889-2891
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Takahashi Naoyuki¹,Majima Jun¹,Nakumura Takato¹,Nonaka Satoshi¹,Yagi Hiromi¹,Shinriki Yoichi¹,Tamanuki Katsumi¹

Affiliation:

1. Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatus, Shizuoka 432-8561, Japan, and Humo Laboratory Company, 5-9-11 Nishiogi-Kita, Suginami-ku, Tokyo 167-0042, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm021712m

Reference13 articles.

1. SYNTHETIC QUARTZ WITH A MECHANICAL Q EQUIVALENT TO NATURAL QUARTZ

2. Glow Discharge Formation of Silicon Oxide and The Deposition of Silicon Oxide Thin Film Capacitors by Glow Discharge Techniques

3. Deposition of Silica Films by the Glow Discharge Technique

4. Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate

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