Electron Transport Suppression from Tip−π State Interaction on Si(100)-2 × 1 Surfaces-Reference-Cited by-同舟云学术

Electron Transport Suppression from Tip−π State Interaction on Si(100)-2 × 1 Surfaces

Published:2011-01-10 Issue:3 Volume:7 Page:707-712
ISSN:1549-9618
Container-title:Journal of Chemical Theory and Computation
language:en
Short-container-title:J. Chem. Theory Comput.

Author:

Dou K. P.¹²,Fan W.²,Niehaus T. A.³⁴,Frauenheim T.⁴,Wang C. L.¹,Zhang X. H.²,Zhang R. Q.⁵

Affiliation:

1. School of Physics, Shandong University, Jinan 250100, P.R. China

2. Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

3. Institute I—Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany

4. Bremen Center for Computational Material Science, University Bremen, 28334 Bremen, Germany

5. Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region, China

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry,Computer Science Applications

Link

https://pubs.acs.org/doi/pdf/10.1021/ct1004998

Reference23 articles.

1. Self-directed growth of molecular nanostructures on silicon

2. STM Study of Multiple Bonding Configurations and Mechanism of 1,3-Cyclohexadiene Attachment on Si(100)-2 × 1

3. C60-terminated Si surfaces: Charge transfer, bonding, and chemical passivation

4. Microscopic observation of precursor-mediated adsorption process ofNH3onSi(100)c(4×2)using STM

5. Contact Formation Dynamics: Mapping Chemical Bond Formation between a Molecule and a Metallic Probe

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