High-Performance Field Effect Transistors from Solution Processed Carbon Nanotubes-Reference-Cited by-同舟云学术

High-Performance Field Effect Transistors from Solution Processed Carbon Nanotubes

Published:2010-10-19 Issue:11 Volume:4 Page:6659-6664
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wang Huiliang¹,Luo Jun¹,Robertson Alex¹,Ito Yasuhiro¹,Yan Wenjing¹,Lang Volker¹,Zaka Mujtaba¹,Schäffel Franziska¹,Rümmeli Mark H.²³,Briggs G. Andrew D.¹,Warner Jamie H.¹

Affiliation:

1. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom

2. IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany

3. Technische Universität Dresden, Dresden, D-01062, Germany

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn1020743

Reference31 articles.

1. Single- and multi-wall carbon nanotube field-effect transistors

2. Room-temperature transistor based on a single carbon nanotube

3. Nanotube Molecular Wires as Chemical Sensors

4. High-Mobility Nanotube Transistor Memory

5. Polymer-Assisted Direct Deposition of Uniform Carbon Nanotube Bundle Networks for High Performance Transparent Electrodes

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