Hole Carriers Doping Effect on the Metal–Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films-Reference-Cited by-同舟云学术

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Hole Carriers Doping Effect on the Metal–Insulator Transition of N-Incorporated Vanadium Dioxide Thin Films

Published:2014-06-06 Issue:24 Volume:118 Page:12837-12844
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zhang Wenhua¹,Wang Kai¹,Fan Lele¹,Liu Lingyun¹,Guo Panpan¹,Zou Chongwen¹,Wang Jiaou²,Qian Haijie²,Ibrahim Kurash²,Yan Wensheng¹,Xu Faqiang¹,Wu Ziyu¹²

Affiliation:

1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People’s Republic of China

2. Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp502000s

Reference52 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Intrinsic Optical Properties of Vanadium Dioxide near the Insulator−Metal Transition

3. External-Strain Induced Insulating Phase Transition in VO2 Nanobeam and Its Application as Flexible Strain Sensor

4. Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films

5. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

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1. Uncovering the distinctive phase transition characteristics and thermochromic performance of VO2 with different N-doping sites;Applied Surface Science;2024-06

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3. The stress release of morphological change on thermochromic properties of nitrogen-incorporated VO2 thin films;Journal of Applied Physics;2023-02-06

4. Non-equilibrium Spark Plasma Reactive Doping Enables Highly Adjustable Metal-to-Insulator Transitions and Improved Mechanical Stability for VO₂;The Journal of Physical Chemistry C;2023-01-26

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