Indium−Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent Materials for Li-Insertion Electrochemical Devices-Reference-Cited by-同舟云学术

Indium−Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent Materials for Li-Insertion Electrochemical Devices

Published:2002-01-23 Issue:2 Volume:14 Page:636-642
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Artuso F.¹,Decker F.¹,Krasilnikova A.¹,Liberatore M.¹,Lourenco A.¹,Masetti E.¹,Pennisi A.¹,Simone F.¹

Affiliation:

1. Chemistry Department, University of Roma “La Sapienza”, I-00185 Roma, Italy, ENEA-Casaccia, Thin Films Laboratory, Via Anguillarese, 00060 Roma, Italy, UNICAMP/IFGW/DFA, CP 6165, CEP 13084-970, Campinas, SP, Brazil, Physics Department, University of Catania, Corso Italia 57, 95129 Catania, Italy, and Istituto Nazionale di Fisica della Materia, INFM

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm010558l

Reference32 articles.

1. Synthesis and Electrochemical Properties of Amorphous Vanadates of General Formula RVO 4 (R = In, Cr, Fe, Al, Y) vs. Li

2. Electrochromism of CeVO[sub 4] and Ce/V-Oxide Ion-Storage Films Prepared by the Sol-Gel Route

3. Fe-containing CeVO4 films as Li intercalation transparent counter-electrodes

4. Electrochromism in Nb‐V and Cr‐V Mixed‐Oxides

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