Modeling Silicon Carbide Synthesis on a Submicrometric Scale-Reference-Cited by-同舟云学术

Modeling Silicon Carbide Synthesis on a Submicrometric Scale

Published:2007-07-01 Issue:29 Volume:111 Page:10829-10835
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lemarchand A.¹,Bonnet J. P.¹

Affiliation:

1. Université Pierre et Marie Curie - Paris 6, UMR 7600 LPTMC, Paris, F-75005 France, CNRS, UMR 7600 LPTMC, Paris, F-75005 France, and Ecole Nationale Supérieure de Céramique Industrielle, GEMH, E.A. 3178, 47-73, avenue Albert Thomas, 87065 Limoges, France

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp071520k

Reference23 articles.

1. Self-propagating exothermic reactions: The synthesis of high-temperature materials by combustion

2. Fundamental aspects of the heterogeneous flame in the self-propagating high-temperature synthesis (SHS) process

3. Complex behavior of self-propagating reaction waves in heterogeneous media

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