Trapping High-Pressure Nanophase of Ge upon Laser Ablation in Liquid-Reference-Cited by-同舟云学术

Trapping High-Pressure Nanophase of Ge upon Laser Ablation in Liquid

Published:2008-12-30 Issue:3 Volume:9 Page:1390-1393
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Liu P¹,Cao Y. L.¹,Chen X. Y.¹,Yang G. W.¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, School of Physics Science & Engineering, Zhongshan University, Guangzhou 510275, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg800633j

Reference19 articles.

1. Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

2. Structural and optical properties of germanium nanoparticles

3. Highly Luminescent Silicon Nanocrystals with Discrete Optical Transitions

4. Silicon nanocrystals with ensemble quantum yields exceeding 60%

5. Synthesis and optical properties of colloidal germanium nanocrystals

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