Novel Synthesis of High Surface Area Silicon Carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of Organosilanes-Reference-Cited by-同舟云学术

Novel Synthesis of High Surface Area Silicon Carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of Organosilanes

Published:2005-03-02 Issue:7 Volume:17 Page:1797-1802
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Pol Vilas G.¹,Pol Swati V.¹,Gedanken Aharon¹

Affiliation:

1. Department of Chemistry and Kanbar Laboratory for Nanomaterials at the Bar-Ilan University Center for Advanced Materials and Nanotechnology, Bar-Ilan University, Ramat-Gan, 52900, Israel

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm048032z

Reference23 articles.

1. Formation of SiC via carbothermal reduction of a carbon-containing mesoporous MCM-48 silica phase: a new route to produce high surface area SiC

2. Synthesis of β-SiC nanowires with SiO2 wrappers

3. A Simple Method for the Synthesis of Silicon Carbide Nanorods

4. Characteristics of plasma processed SiC nanocrystallites and nanorods

5. Formation of Nano SiC Particles by Laser-Assisted CVD

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