Axially Engineered Metal–Insulator Phase Transition by Graded Doping VO2 Nanowires-Reference-Cited by-同舟云学术

Axially Engineered Metal–Insulator Phase Transition by Graded Doping VO2 Nanowires

Published:2013-03-18 Issue:12 Volume:135 Page:4850-4855
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Lee Sangwook¹²,Cheng Chun¹²,Guo Hua¹²,Hippalgaonkar Kedar¹²,Wang Kevin¹²,Suh Joonki¹²,Liu Kai¹²,Wu Junqiao¹²

Affiliation:

1. Department of Materials Science and Engineering and ‡Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States

2. National Center for Electron Microscopy and ⊥Division of Materials Sciences, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja400658u

Reference50 articles.

1. The metal-insulator transitions of VO2: A band theoretical approach

2. Structural Aspects of the Metal-Insulator Transitions in Cr-Doped VO2

3. Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams

4. Strain-Induced Self Organization of Metal−Insulator Domains in Single-Crystalline VO2 Nanobeams

5. Electronic Properties of VO2near the Semiconductor-Metal Transition

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