Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors-Reference-Cited by-同舟云学术

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Published:2013-07-22 Issue:8 Volume:13 Page:3546-3552
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Li Song-Lin¹,Wakabayashi Katsunori¹,Xu Yong¹,Nakaharai Shu¹,Komatsu Katsuyoshi¹,Li Wen-Wu¹,Lin Yen-Fu¹,Aparecido-Ferreira Alex¹,Tsukagoshi Kazuhito¹

Affiliation:

1. WPI Center for Materials Nanoarchitechtonics (WPI-MANA) and ‡International Center for Young Scientist (ICYS), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl4010783

Reference41 articles.

1. Two-dimensional atomic crystals

2. Single-layer MoS2 transistors

3. Graphene transistors

4. Beyond the conventional transistor

5. Silicon Device Scaling to the Sub-10-nm Regime

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