Atomic and Electronic Structure of the BaTiO3/Fe Interface in Multiferroic Tunnel Junctions-Reference-Cited by-全球学者库

Atomic and Electronic Structure of the BaTiO3/Fe Interface in Multiferroic Tunnel Junctions

Published:2011-12-28 Issue:1 Volume:12 Page:376-382
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Bocher Laura¹,Gloter Alexandre¹,Crassous Arnaud²,Garcia Vincent²,March Katia¹,Zobelli Alberto¹,Valencia Sergio³,Enouz-Vedrenne Shaïma⁴,Moya Xavier⁵,Marthur Neil D.⁵,Deranlot Cyrile²,Fusil Stéphane²,Bouzehouane Karim²,Bibes Manuel²,Barthélémy Agnès²,Colliex Christian¹,Stéphan Odile¹

Affiliation:

1. Laboratoire de Physique des Solides, Bâtiment 510, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France

2. Unité Mixte de Physique CNRS, Thales associée à l’Université Paris Sud XI, Campus de l’Ecole Polytechnique, 1 Avenue A. Fresnel, 91767 Palaiseau, France

3. Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany

4. Thales Research and Technology, Campus de l’Ecole Polytechnique, 1 Avenue A. Fresnel, 91767 Palaiseau, France

5. Department of Materials Science, University of Cambridge, Cambridge CB23QZ, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl203657c

Reference22 articles.

1. Tunneling Across a Ferroelectric

2. Towards a magnetoelectric memory

3. Ultrathin oxide films and interfaces for electronics and spintronics

4. Ferroelectric Control of Spin Polarization

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