Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films-Reference-Cited by-同舟云学术

Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films

Published:2014-04-30 Issue:9 Volume:6 Page:6346-6350
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Woo-Hee¹,Son Jong Yeog²,Jang Hyun Myung³

Affiliation:

1. Department of Chemical Engineering, Stanford University, 381 North-South Mall, Stanford, California 94305, United States

2. Department of Applied Physics, College of Applied Science, Kyung Hee University, 1732 Deogyeong-daero, Giheung-Gu, Yongin-City 446-701, Korea

3. Department of Materials Science and Engineering, and Department of Physics, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang 790-784, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am501630k

Reference24 articles.

1. Why Are There so Few Magnetic Ferroelectrics?

2. Variations of ferroelectric off-centering distortion and3d−4porbital mixing in La-dopedBiFeO3multiferroics

3. Ferroelectric Behavior in Bismuth Ferrite Thin Films of Different Thickness

4. Influences of Oxygen Pressure on Optical Properties and Interband Electronic Transitions in Multiferroic Bismuth Ferrite Nanocrystalline Films Grown by Pulsed Laser Deposition

5. Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

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