Extended Gate Ion-Sensitive Field-Effect Transistors Using Al2O3/Hexagonal Boron Nitride Nanolayers for pH Sensing
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260 Singapore
2. Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Funder
Ministry of Education - Singapore
Science and Engineering Research Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.9b02037
Reference42 articles.
1. Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response
2. High-Performance Double-Gate $\alpha $ -InGaZnO ISFET pH Sensor Using a HfO2 Gate Dielectric
3. Modeling of carbon nanotube ISFETs with high‐ κ gate dielectrics for biosensing applications
4. A novel ISFET-based NAD+-dependent enzyme sensor for lactate
5. PG-ISFET based DNA-logic for reaction monitoring
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