Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors

Author:

Xu Lin1ORCID,Pan Yuanyuan2,Liu Shiqi3ORCID,Shi Bowen3,Xu Lianqiang4,Yang Jie3,Yan Jiahuan3,Pang Hua3,Zhang Xiuying3,Yang Chen3ORCID,Yang Jinbo356,Wang Yangyang7ORCID,Zhang Zhiyong1ORCID,Lu Jing356

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, P. R. China

2. State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, China

3. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

4. School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan, Ningxia 756000, P. R. China

5. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

6. Beijing Key Laboratory for Magnetoeletric Materials and Devices (BKL-MEMD), Beijing 100871, P. R. China

7. Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

High Performance Computing Platform of Peking University, China

Ministry of Science and Technology (National Materials Genome Project) of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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