External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon-Reference-Cited by-同舟云学术

External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon

Published:2010-07-02 Issue:8 Volume:10 Page:2857-2862
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Majumdar Kausik¹,Murali Kota V. R. M.²,Bhat Navakanta¹,Lin Yu-Ming³

Affiliation:

1. Department of Electrical Communication Engineering and Center of Excellence in Nanoelectronics, Indian Institute of Science, Bangalore 560012, India

2. IBM Semiconductor Research and Development Center, Bangalore 560045, India

3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl100909n

Reference23 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. The rise of graphene

4. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

5. A Graphene Field-Effect Device

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