Organometallic Precursors for the Formation of GaN by MOCVD: Structural Characterization of (CH3)3GaNH(CH2CH3)2 by Gas-Phase Electron Diffraction and ab Initio Molecular Orbital Calculations-Reference-Cited by-同舟云学术

Organometallic Precursors for the Formation of GaN by MOCVD: Structural Characterization of (CH3)3GaNH(CH2CH3)2 by Gas-Phase Electron Diffraction and ab Initio Molecular Orbital Calculations

Published:2002-08-15 Issue:37 Volume:106 Page:8762-8768
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Aarset Kirsten¹,Beer Carolyn E.¹,Hagen Kolbjørn¹,Page Elizabeth M.¹,Rice David A.¹

Affiliation:

1. Faculty of Engineering, Oslo University College, Cort Adelers Gate 30, N-0254 Oslo, Norway, Department of Chemistry, University of Reading, Whiteknights Park, Reading RG6 6AD, U.K., and Department of Chemistry, Norwegian University of Science and Technology, NTNU, N-7491 Trondheim, Norway

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp020523o

Reference38 articles.

1. Growth of Group III Nitrides. A Review of Precursors and Techniques

2. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

3. Metalorganic precursors for vapour phase epitaxy

4. Synthesis of ultra-high purity trialkylgallium MOVPE precursors. Crystal structures of triethylgallium and triisopropylgallium adducts with macrocyclic tertiary amines

5. X-ray structural analysis of Me3M·HN(CH2Ph)2 (M=Ga, In) adducts

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