Grain Boundaries in Graphene on SiC(0001̅) Substrate-Reference-Cited by-同舟云学术

Grain Boundaries in Graphene on SiC(0001̅) Substrate

Published:2014-10-28 Issue:11 Volume:14 Page:6382-6386
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tison Yann¹,Lagoute Jérôme¹,Repain Vincent¹,Chacon Cyril¹,Girard Yann¹,Joucken Frédéric²,Sporken Robert²,Gargiulo Fernando³,Yazyev Oleg V.³,Rousset Sylvie¹

Affiliation:

1. Laboratoire Matériaux et Phénomènes Quantiques, Universié Paris Diderot-Paris 7, Sorbonne Paris Cité, CNRS, UMR 7162, 10 rue A. Domon et L. Duquet, 75205 Paris 13, France

2. Research Center in Physics of Matter and Radiation (PMR), Université de Namur, 61 Rue de Bruxelles, 5000 Namur, Belgium

3. Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Funder

Agence Nationale de la Recherche

Swiss National Science Foundation

Institut Universitaire de France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl502854w

Reference37 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

4. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

5. Polycrystalline graphene and other two-dimensional materials

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