SIC: AN ADVANCED SEMICONDCTOR MATERIAL FOR POWER DEVICES-Reference-Cited by-同舟云学术

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SIC: AN ADVANCED SEMICONDCTOR MATERIAL FOR POWER DEVICES

Published:2014-05-25 Issue:15 Volume:03 Page:248-252
ISSN:2321-7308
Container-title:International Journal of Research in Engineering and Technology
language:
Short-container-title:IJRET

Author:

. Ajay Kumar

Publisher

eSAT Publishing House

Subject

General Engineering

Link

http://esatjournals.net/ijret/2014v03/i15/IJRET20140315048.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An ultra high-endurance memristor using back-end-of-line amorphous SiC;Scientific Reports;2024-06-18

2. Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device;Scientific Reports;2023-12-21

3. Role of Defects, Impurities and Deviations from the Stoichiometry in the Optoelectronic Properties of Semiconductors;Chemistry of Semiconductors;2023-11-24

4. Oxidation Differences on Si- vs. C- terminated Surfaces of SiC during Planarization in the Fabrication of High-power, High-frequency Semiconductor Device;2023-09-21

5. Performance Analysis of SiC-Based DC/DC Converter for Solar Power Tower Heliostat Application;Arabian Journal for Science and Engineering;2023-07-05

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