Non-topographic current contrast in scanning field emission microscopy

Author:

Bertolini G.1,Gürlü O.1ORCID,Pröbsting R.1,Westholm D.1,Wei J.1ORCID,Ramsperger U.1,Zanin D. A.1,Cabrera H.1ORCID,Pescia D.1ORCID,Xanthakis J. P.2ORCID,Schnedler M.3,Dunin-Borkowski R. E.3ORCID

Affiliation:

1. Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland

2. Electrical and Computer Engineering Department, National Technical University of Athens, Athens 15700, Greece

3. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany

Abstract

In scanning field emission microscopy (SFEM), a tip (the source) is approached to few (or a few tens of) nanometres distance from a surface (the collector) and biased to field-emit electrons. In a previous study (Zanin et al. 2016 Proc. R. Soc. A 472 , 20160475. ( doi:10.1098/rspa.2016.0475 )), the field-emitted current was found to change by approximately 1% at a monatomic surface step (approx. 200 pm thick). Here we prepare surface domains of adjacent different materials that, in some instances, have a topographic contrast smaller than 15 pm. Nevertheless, we observe a contrast in the field-emitted current as high as 10%. This non-topographic collector material dependence is a yet unexplored degree of freedom calling for a new understanding of the quantum mechanical tunnelling barrier at the source site that takes into account the properties of the material at the collector site.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Kommission für Technologie und Innovation

European Commission

Publisher

The Royal Society

Subject

Multidisciplinary

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