Abstract
In the present work the measurements of the resistivity of evaporated films of the alkali metals (Lovell 1936
a, b
; Appleyard and Lovell 1937) have been extended to a thickness of several thousand angstroms. The previous results were limited to films of less than a few hundred angstroms in thickness; and it appeared that thin creased resistivity of these thin films compared with that of the bulk metal was due merely to the shortening of the mean free path of the conduction electrons by collision with the boundaries of the film. It was therefore to be expected that at thicknesses much in excess of the mean free path the resistivity of the film material should closely approximate to that of the bulk metal. The present results confirm this expectation only in the case of caesium, where the resistivity approaches within a few per cent that of the bulk metal. Potassium and rubidium films, on the other hand, show a considerable excess of resistivity above that of the bulk metal, but it is shown that this excess is a residual resistance due to lattice strain, and that it may be partially removed by suitable annealing.
Cited by
16 articles.
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1. Sir Alfred Charles Bernard Lovell OBE. 31 August 1913 — 6 August 2012;Biographical Memoirs of Fellows of the Royal Society;2016-01
2. Kinetic Size Effects in Multilayer Films with a Polycrystalline Structure;Uspehi Fiziki Metallov;2010-12-01
3. Nonlocal Einstein relation;Physical Review B;1992-12-15
4. Size-Dependent Electrical Conduction in Thin Metal Films and Wires;Physics of Thin Films - Advances in Research and Development;1971
5. Thin film semiconductors;1965 Transactions of the Third International Vacuum Congress;1967