Theory of the Schottky barrier solar cell

Abstract

A model of Schottky barrier solar cells with an interfacial layer is described which takes into account more accurately than has been done so far the dependence of barrier height on the interfacial density of states (D s ) and consequently the various potential drops in the cell. The improvement tends to yield higher predicted efficiencies for low values of D s . Also taken into account is the recombination traffic through the interfacial states. This effect is important at high values of D s when it lowers the predicted efficiency. Recombination in the transition and bulk regions is also considered, but this does not have a very marked effect. Numerical results are given for a Au-Si0 2 -Si contact. A new effect - the possible fanning out of the quasi-Fermi levels for the interfacial states - is also noted.