Tunable 3.3 μm InAsSb/InAsSbP diode lasers: a new concept of fast lasing due to nonlinear optical effects
Author:
Affiliation:
1. Ioffe Physico-Technical Institute, RAS, Politechnicheskaya ul. 26, St Petersburg 194021, Russia ()
Publisher
The Royal Society
Subject
General Physics and Astronomy,General Engineering,General Mathematics
Link
https://royalsocietypublishing.org/doi/pdf/10.1098/rsta.2000.0740
Reference5 articles.
1. Long-wavelength InAsSb/InAsSbP lasers for spectroscopy of methane (λ = 3.2-3.4 µm);Baranov A. N.;Sov. Tech. Phys. Lett.,1992
2. Using current to tune the wavelength of InAsSb/InAsSbP double heterostructure lasers;Danilova T. N.;Tech. Phys. Lett.,1996
3. Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm
4. Influence of charge carriers on tuning in InAsSb lasers
5. InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance simulation of interband laser diodes grown on InAs substrate;Physica E: Low-dimensional Systems and Nanostructures;2002-07
2. High tunability and superluminescence in InAs mid-infrared light emitting diodes;Journal of Physics D: Applied Physics;2002-01-22
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