Magnetoelectric interfaces and spin transport

Abstract

Engineered heterostructures designed for electric control of magnetic properties, the so-called magnetoelectric interfaces , present a novel route towards using the spin degree of freedom in electronic devices. Here, we review how a subset of such interfaces, namely ferromagnet–ferroelectric heterostructures, display electronically mediated control of magnetism and, in particular, emphasis is placed on how these effects manifest themselves as detectable spin-dependent transport phenomena. Examples of these effects are given for a variety of material systems on the basis of ferroelectric oxides, manganese and ruthenium magnetic complex oxides and elemental ferromagnetic metals. Results from both theory and experiment are discussed.