Giant flexoelectric effect through interfacial strain relaxation

Author:

Lee Daesu1,Noh Tae Won1

Affiliation:

1. Research Center for Functional Interfaces, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

Abstract

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

Publisher

The Royal Society

Subject

General Physics and Astronomy,General Engineering,General Mathematics

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