X-ray diffraction from one-dimensionally disordered 2H crystals undergoing solid state transformation to the 6H structure. III. Comparison with experimental observations on SiC

Abstract

The diffraction effects predicted theoretically in the preceding two papers for 2H crystals undergoing solid state transformation to the 6H structure by the layer displacement mechanism and the deformation mechanism are compared with those experimentally observed on SiC. It is shown that the observed diffraction characteristics can be explained in terms of the layer displacement mechanism and not the deformation mechanism. A simple estimate of the layer displacement fault probability in two transformed 6H SiC crystals has been made by analysing the halfwidth of the experimentally obtained intensity profiles of the 10. L reflexions. It is also shown that the presence of a small concentration of growth faults in the as-grown 2H SiC crystal does not alter the basic diffraction characteristics predicted in part I of this series of papers.