The Effect of Underlapped Segments on InSb Nanowire Field Effect Transistors
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Published:2015-02-01
Issue:1
Volume:10
Page:82-85
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Jing X.,Penchev M.,Zhong J.,Paul R.,Lake R.,Ozkan M.,Ozkan C. S.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials