Structural and Electrical Properties of (Al or Ga) and P Co-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

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Structural and Electrical Properties of (Al or Ga) and P Co-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition

Published:2015-08-01 Issue:4 Volume:10 Page:449-454
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Noh Woo-Seok,Lee Jung-A,Lee Joon-Hyung,Heo Young-Woo,Kim Jeong-Joo

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of a ZnO buffer layer on structural and electrical properties of ZnO:Al,P thin films grown by RF magnetron sputtering;Ceramics International;2017-10

2. XPS and UV–vis studies of Ga-doped zinc oxide nanoparticles synthesized by gelatin based sol-gel approach;Ceramics International;2016-09

3. Effect of oxygen pressure on the p-type conductivity of Ga, P co-doped ZnO thin film grown by pulsed laser deposition;Ceramics International;2016-02

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