Electrical Properties of Ta(Si)N Films Prepared by Atomic Layer Deposition from Tert-Butylimido-Tris-Diethylamido Tantalum, Silane and Hydrogen Plasma
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Published:2013-06-01
Issue:6
Volume:13
Page:4097-4100
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Park Seung-Gon,Woo Hee-Gweon,Sunwoo Changshin,Kim Do-Heyoung
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering