Design Issues for Lateral Double-Diffused Metal-Oxide-Semiconductor with Higher Breakdown Voltage
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Published:2013-05-01
Issue:5
Volume:13
Page:3260-3264
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Sung Kunsik,Won Taeyoung
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering