A Tight-Binding Molecular Dynamics Simulation Analysis of Carbon Nanotube Growth Process Parameters
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Published:2006-04-01
Issue:2
Volume:3
Page:231-236
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ISSN:1546-1955
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Container-title:Journal of Computational and Theoretical Nanoscience
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language:en
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Short-container-title:j comput theor nanosci
Author:
Ju Shin-Pon,Weng Cheng-I,Fang Kuan-Chuan,Lee Chuan-Sheng
Abstract
This paper employs tight-binding molecular dynamics simulations to investigate the effects upon the final nanotube morphology of three principal carbon nanotube growth process parameters, namely the radii of the initial carbon nanotube patterns, the temperatures of the carbon nanotube
patterns, and the energies of the incident carbon atoms. The simulation results provide an understanding of the roles played by these parameters in the fabrication of carbon nanotubes from an atomic perspective. It is shown that carbon nanotube patterns with small radii tend to form close-capped
ends, while patterns with larger radii tend to promote lifted-up growth. Furthermore, the effect of pattern temperature is more obvious in the case of larger radii carbon nanotube patterns, in which disordered structures are evident at low pattern temperatures. Finally, it is shown that incident
atoms with higher energies not only form unstable bonds with other carbon atoms, but may also destroy the covalent bonds of previously deposited carbon atoms. The present results provide a valuable insight into the promotion of close-capped nanotubes or lifted-up growth during the fabrication
of carbon nanotubes.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Computational Mathematics,Condensed Matter Physics,General Materials Science,General Chemistry