Monolithic-3D (M3D) Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical (CMOS-NEM) Hybrid Reconfigurable Logic (RL) Circuits
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Published:2020-07-01
Issue:7
Volume:20
Page:4176-4181
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Ko Ji Wang1,
Choi Woo Young1
Affiliation:
1. Department of Electronic Engineering, Sogang University, Seoul 04107, Republic of Korea
Abstract
Monolithic-three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) hybrid reconfigurable logic (RL) circuits are compared and analyzed with CMOS-only RL ones in the 130-nm CMOS technology node. M3D CMOS-NEM hybrid RL circuits are superior to CMOS-only ones in terms of power consumption
and signal transfer speed thanks to the NEM memory switches. As well as in the routing part, it has many advantages in the logic part following the switch.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering