I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High ION/IOFF Ratio
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Published:2020-07-01
Issue:7
Volume:20
Page:4298-4302
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Lee Ryoongbin1,
Lee Junil1,
Lee Kitae1,
Kim Soyoun1,
Kim Sihyun1,
Kim Sangwan2,
Park Byung-Gook1
Affiliation:
1. Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
2. Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
Abstract
In this paper, we propose an I-shaped SiGe fin tunnel field-effect transistor (TFET) and use technology computer aided design (TCAD) simulations to verify the validity. Compared to conventional Fin TFET on the same footprint, a 27% increase in the effective channel width can be obtained
with the proposed TFET. The proposed Fin TFET was confirmed to have 300% boosted on-current (I on), 25% reduced subthreshold swing (SS), and 52% lower off-current (I off) than conventional Fin TFET through TCAD simulation results. These performance
improvements are attributed to increased effective channel width and enhanced gate controllability of the I-shaped fin structure. Furthermore, the fabrication process of forming an I-shaped SiGe fin is also presented using the SiGe wet etch. By optimizing the Ge condensation process, an I-shaped
SiGe fin with a Ge ratio greater than 50% can be obtained.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering