In Situ Deposition of CuBiS2 on Mesoporous TiO2 Film for Light Absorber in Solar Cells

Abstract

In this report, emplectite (CuBiS2) semiconductor has been deposited on mesoporous TiO2 using gas–solid reaction method. For the first time, CuCl2 and BiCl3 are solution-coated on mesoporous TiO2 films, and thereafter reacted with H2S gas in an H2S atmosphere. The CuBiS2 film is further confirmed using X-ray diffraction; thus, demonstrating the pure phase of CuBiS2. CuBiS2 film shows high spectral absorption with an energy gap (Eg) of 2.18 eV. Furthermore, devices have a structure consisting of FTO/compact-TiO2/mesoporous-TiO2/CuBiS2/P3HT/Ag have been fabricated and hence exhibit high photoresponse performance.