Improved Mechanical and Electrical Properties of Phase-Change-Memory Ga–Sb Thin Films-Reference-Cited by-同舟云学术

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Improved Mechanical and Electrical Properties of Phase-Change-Memory Ga–Sb Thin Films

Published:2020-01-01 Issue:1 Volume:20 Page:213-221
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Yin Qixun¹,Chen Leng¹

Affiliation:

1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se;Applied Physics Letters;2024-05-27

2. Designing Sb phase change materials by alloying with Ga2S3 towards high thermal stability and low resistance drift by bond reconfigurations;Journal of Alloys and Compounds;2023-08

3. Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes;Materials & Design;2021-04

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