Bidirectional Current Gating in Two-Terminal VO2/AIN/Si Heterostructure Device Using 976 nm Laser Diode-Reference-Cited by-同舟云学术

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Bidirectional Current Gating in Two-Terminal VO2/AIN/Si Heterostructure Device Using 976 nm Laser Diode

Published:2020-01-01 Issue:1 Volume:20 Page:420-426
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Jihoon¹,Choi Sungwook²,Lee Seul-Lee²,Kim Min Seok²,Kim Do Kyung²,Kim Bong-Jun³,Lee Yong Wook¹

Affiliation:

1. School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea

2. Interdisciplinary Program of Biomedical Mechanical & Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea

3. Mobrik Co. Ltd., 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of buffer layers on the strain-induced insulator-metal transition of VO ₂ thin films: a review;Critical Reviews in Solid State and Materials Sciences;2024-09-13

2. High-speed photothermally triggered bidirectional current switching in VO2/AlN/Si-based heterostructure device;Optics & Laser Technology;2023-02

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